型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG7PH42UD1MPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE | |
IRG7PH42UD1MPBF_15 | INFINEON |
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1300Vpk repetitive transient capacity | |
IRG7PH42UD1PBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S | |
IRG7PH42UD2-EPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FRE | |
IRG7PH42UD2PBF | INFINEON |
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Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FRE | |
IRG7PH42UD-EP | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PH42UDPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PH42U-EP | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH42UPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH44K10D-EPBF | INFINEON |
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode |