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IRG7PH35UPBF PDF预览

IRG7PH35UPBF

更新时间： 2024-02-01 10:21:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 379K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

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IRG7PH35UPBF 数据手册

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PD - 97479  
IRG7PH35UPbF  
IRG7PH35U-EP  
INSULATED GATE BIPOLAR TRANSISTOR  
Features  
• Low VCE (ON) trench IGBT technology  
• Low switching losses  
• Maximum junction temperature 175 °C  
• Square RBSOA  
C
VCES = 1200V  
I NOMINAL = 20A  
• 100% of the parts tested for ILM  
• Positive VCE (ON) temperature co-efficient  
• Tight parameter distribution  
• Lead -Free  
G
TJ(max) = 175°C  
VCE(on) typ. = 1.9V  
E
n-channel  
Benefits  
• High efficiency in a wide range of applications  
• Suitable for a wide range of switching frequencies due to  
low VCE (ON) and low switching losses  
C
C
• Rugged transient performance for increased reliability  
• Excellent current sharing in parallel operation  
E
E
C
C
G
G
Applications  
• U.P.S  
TO-247AC  
IRG7PH35UPbF  
TO-247AD  
IRG7PH35U-EP  
• Welding  
• Solar inverter  
• Induction heating  
G
Gate  
C
E
Collector  
Emitter  
Absolute Maximum Ratings  
Parameter  
Max.  
1200  
55  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Nominal Current  
IC @ TC = 25°C  
IC @ TC = 100°C  
35  
A
INOMINAL  
20  
Pulse Collector Current, VGE=15V  
Clamped Inductive Load Current, VGE=20V  
Continuous Gate-to-Emitter Voltage  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
ICM  
60  
ILM  
80  
VGE  
±30  
210  
105  
V
PD @ TC = 25°C  
W
PD @ TC = 100°C  
TJ  
-55 to +175  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Thermal Resistance Junction-to-Case-(each IGBT)  
Min.  
–––  
–––  
–––  
Typ.  
–––  
0.24  
40  
Max.  
0.70  
–––  
Units  
Rθ (IGBT)  
JC  
°C/W  
Rθ  
Thermal Resistance, Case-to-Sink (flat, greased surface)  
CS  
Rθ  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
–––  
JA  
1
www.irf.com  
3/26/10  
1234567...10

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