Datasheet > IRG7PH35UD1-EP

IRG7PH35UD1-EP

更新时间： 2024-11-05 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管开关晶体管栅
页数	文件大小	规格书
9页	402K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

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中文翻译

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IRG7PH35UD1-EP 数据手册

PD - 97455

IRG7PH35UD1PbF

IRG7PH35UD1-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRA-LOWVFDIODE

FORINDUCTIONHEATINGANDSOFTSWITCHINGAPPLICATIONS

Features

• Low V_{CE (ON)}trench IGBT Technology

• Low Switching Losses

• SquareRBSOA

• Ultra-LowV_FDiode

• 1300Vpk Repetitive Transient Capacity

V_CES= 1200V

I _NOMINAL= 20A

• 100% of the Parts Tested for I_LM

T_J(max)= 150°C

V_CE(on)typ. = 1.9V

• Positive V_{CE (ON)}Temperature Co-Efficient

• TightParameterDistribution

• LeadFreePackage

n-channel

Benefits

• Device optimized for induction heating and soft switching

applications

• High Efficiency due to Low V_CE(on), low switching losses

andUltra-lowV_F

• Ruggedtransientperformanceforincreasedreliability

• Excellent current sharing in parallel operation

• Low EMI

TO-247AC

TO-247AD

IRG7PH35UD1PbF

IRG7PH35UD1-EP

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

Continuous Collector Current

Nominal Current

1200

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_NOMINAL

I_CM

Pulse Collector Current, V_GE=15V

Clamped Inductive Load Current, V_GE=20V

I_LM

Diode Continous Forward Current

Diode Maximum Forward Current

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

±30

V_GE

179

P_D@ T_C= 25°C

P_D@ T_C= 100°C

-55 to +150

T_J

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

°C

T_STG

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.70

1.35

–––

Units

R_θ(IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

R_θ(Diode)

°C/W

R_θ

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_θ

–––

www.irf.com

02/09/2010

12 3 4 5 6 7...9

中文翻译

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与IRG7PH35UD1-EP相关器件

型号	品牌	获取价格	描述	数据表
IRG7PH35UD1MPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
IRG7PH35UD1MPBF_15	INFINEON	获取价格	Low Switching Losses
IRG7PH35UD1PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH35UD-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35U-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH37K10D-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PH37K10DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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