Datasheet > IRG7PH35UD1MPBF_15

IRG7PH35UD1MPBF_15

更新时间： 2024-01-07 22:07:46

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	295K
描述
Low Switching Losses

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中文翻译

获取价格

数据手册

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IRG7PH35UD1MPBF_15 数据手册

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IRG7PH35UD1MPbF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRA-LOWVFDIODE

FORINDUCTIONHEATINGANDSOFTSWITCHINGAPPLICATIONS

Features

• Low V_{CE (ON)}trench IGBT Technology

• Low Switching Losses

• SquareRBSOA

V_CES= 1200V

I_C= 25A, T_C= 100°C

T_J(max)= 150°C

• Ultra-LowV_FDiode

• 1300Vpk Repetitive Transient Capacity

• 100% of the Parts Tested for I_LM

• Positive V_{CE (ON)}Temperature Co-Efficient

• TightParameterDistribution

• LeadFreePackage

V_CE(on)typ. = 1.9V @ I_C= 20A

n-channel

Benefits

• Device optimized for induction heating and soft switching

applications

• High Efficiency due to Low V_CE(on), low switching losses

andUltra-lowV_F

• Ruggedtransientperformanceforincreasedreliability

• Excellent current sharing in parallel operation

• Low EMI

TO-247AD

Gate

Collector

Emitter

Standard Pack

Base part number

Package Type

Orderable part number

Form

Quantity

IRG7PH35UD1MPbF

TO-247AD

Tube

IRG7PH35UD1MPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

1200

V_{(BR)Transient}

Repetitive Transient Collector-to-Emitter Voltage

Continuous Collector Current

1300

I_C@ T_C= 25°C

I_C@ T_C= 100°C

Continuous Collector Current

I_CM

Pulse Collector Current, V_GE=15V

150

I_LM

Clamped Inductive Load Current, V_GE=20V

Diode Continous Forward Current

Diode Maximum Forward Current

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

V_GE

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

±30

P_D@ T_C= 25°C

179

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

°C

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.70

1.35

–––

Units

R_θ

(IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

(Diode)

Thermal Resistance Junction-to-Case-(each Diode)

°C/W

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

April 24, 2013

12 3 4 5 6 7...9

中文翻译

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与IRG7PH35UD1MPBF_15相关器件

型号	品牌	获取价格	描述	数据表
IRG7PH35UD1PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH35UD-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35U-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH37K10D-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PH37K10DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PH37K10DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PH42UD1-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S

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