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IRG7IC18FDPBF PDF预览

IRG7IC18FDPBF

更新时间: 2024-02-04 16:31:40
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
11页 597K
描述
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel

IRG7IC18FDPBF 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.73最大集电极电流 (IC):14 A
集电极-发射极最大电压:600 V最大降落时间(tf):190 ns
门极发射器阈值电压最大值:7 V门极-发射极最大电压:20 V
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大上升时间(tr):50 ns
子类别:Insulated Gate BIP Transistors表面贴装:NO
Base Number Matches:1

IRG7IC18FDPBF 数据手册

 浏览型号IRG7IC18FDPBF的Datasheet PDF文件第2页浏览型号IRG7IC18FDPBF的Datasheet PDF文件第3页浏览型号IRG7IC18FDPBF的Datasheet PDF文件第4页浏览型号IRG7IC18FDPBF的Datasheet PDF文件第5页浏览型号IRG7IC18FDPBF的Datasheet PDF文件第6页浏览型号IRG7IC18FDPBF的Datasheet PDF文件第7页 
IRG7IC18FDPbF  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
VCES = 600V  
C
IC = 7.5A, TC = 100°C  
tSC 3μs, TJ(max) = 150°C  
VCE(on) typ. = 1.60V @ Ic = 10A  
E
G
C
G
E
TO-220AB  
n-channel  
Full-Pak  
Applications  
AirConditionerCompressor  
Refrigerator  
VacuumCleaner  
LowFrequencyInverter  
G
Gate  
C
E
Collector  
Emitter  
Features  
Benefits  
High efficienct motor drive application  
Low VCE(on)  
Efficiency stable over temperature  
Optimized trade-off between low losses and EMI performance  
Rugged hard switching operation  
Zero VCE(on) temperature coefficient  
Ultra Fast Soft Recovery Co-pak Diode  
Square RBSOA and 100% Clamp IL Tested  
3μs Short Circuit Capability  
Fully isolated Fullpak package  
Lead-Free, RoHS Compliant  
Enables short circuit protection scheme  
Easy heatsink assembly  
Environmentally friendlier  
Standard Pack  
Base part number  
Package Type  
Orderable part number  
Form  
Quantity  
IRG7IC18FDPbF  
TO-220 FullPak  
Tube  
50  
IRG7IC18FDPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
14  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
IC @ TC = 25°C  
IC @ TC = 100°C  
Continuous Collector Current  
Nominal Current  
7.5  
INominal  
24  
ICM  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
Diode Continous Forward Current  
Diode Continous Forward Current  
Diode Maximum Forward Current  
Continuous Gate-to-Emitter Voltage  
Gate-to-Emitter Voltage  
40  
ILM  
40  
A
IF @ TC = 25°C  
14  
IF @ TC = 100°C  
7.5  
IFM  
40  
VGE  
±20  
±30  
30  
V
VGE  
PD @ TC = 25°C  
Maximum Power Dissipation  
W
°C  
PD @ TC = 100°C  
Maximum Power Dissipation  
12  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
1
www.irf.com © 2012 International Rectifier  
July 27, 2012  

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Low switching losses