是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 最大集电极电流 (IC): | 14 A |
集电极-发射极最大电压: | 600 V | 最大降落时间(tf): | 190 ns |
门极发射器阈值电压最大值: | 7 V | 门极-发射极最大电压: | 20 V |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 最大上升时间(tr): | 50 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG7IC28UPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE |
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IRG7IC30FDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel |
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IRG7PA19UPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 360V V(BR)CES, N-Channel, TO-247AC, LEAD FREE |
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IRG7PG35UPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRG7PG35UPBF_15 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRG7PG42UDPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR |
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IRG7PG42UDPBF_15 | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR |
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IRG7PH28UD1MPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE |
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IRG7PH28UD1PBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE |
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IRG7PH28UD1PBF_15 | INFINEON |
获取价格 |
Low switching losses |
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