Datasheet > IRG7PH28UD1MPBF

IRG7PH28UD1MPBF

更新时间： 2024-10-02 01:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	398K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

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中文翻译

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IRG7PH28UD1MPBF 数据手册

IRG7PH28UD1PbF

IRG7PH28UD1MPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

V_CES= 1200V

I_C= 15A, T_C= 100°C

T_J(MAX)= 150°C

Features

 Low V_{CE (ON)}trench IGBT technology

 Low switching losses

 Square RBSOA

 Ultra-low V_Fdiode

_CE(ON)typ. = 1.95V

 1300Vpk repetitive transient capacity

 100% of the parts tested for I_LM

 Positive V_{CE (ON)}temperature co-efficient

 Tight parameter distribution

 Lead-free package

n-channel

Benefits

 Device optimized for induction heating and soft switching

applications

 High efficiency due to low V_CE(ON), low switching losses and

ultra-low V_F

IRG7PH28UD1PbF

TO-247AC

IRG7PH28UD1MPbF

TO-247AD

 Rugged transient performance for increased reliability

 Excellent current sharing in parallel operation

 Low EMI

Gate

Collector

Emitter

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRG7PH28UD1PbF

IRG7PH28UD1MPbF

TO-247AC

TO-247AD

Tube

IRG7PH28UD1PbF

IRG7PH28UD1MPbF

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Repetitive Transient Collector-to-Emitter Voltage 

Max.

1200

1300

Units

V_CES

V_{(BR) Transient}

I_C@ T_C= 25°C Continuous Collector Current

I_C@ T_C= 100°C Continuous Collector Current

I_CM

I_LM

Pulse Collector Current, V_GE= 15V 

Clamped Inductive Load Current, V_GE= 20V 

100

I_F@ T_C= 25°C Diode Continuous Forward Current

I_F@ T_C= 100°C Diode Continuous Forward Current

I_FM

Diode Maximum Forward Current 

V_GE

Continuous Gate-to-Emitter Voltage

±30

P_D@ T_C= 25°C Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

115

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300

(0.063 in.(1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

www.irf.com

January 8, 2013

12 3 4 5 6 7...10

中文翻译

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与IRG7PH28UD1MPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG7PH28UD1PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
IRG7PH28UD1PBF_15	INFINEON	获取价格	Low switching losses
IRG7PH30K10DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH30K10PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD1-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH35UD1MPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
IRG7PH35UD1MPBF_15	INFINEON	获取价格	Low Switching Losses
IRG7PH35UD1PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH35UD-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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