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IRG7PG35UPBF_15 PDF预览

IRG7PG35UPBF_15

更新时间: 2024-10-02 01:19:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 427K
描述
INSULATED GATE BIPOLAR TRANSISTOR

IRG7PG35UPBF_15 数据手册

 浏览型号IRG7PG35UPBF_15的Datasheet PDF文件第2页浏览型号IRG7PG35UPBF_15的Datasheet PDF文件第3页浏览型号IRG7PG35UPBF_15的Datasheet PDF文件第4页浏览型号IRG7PG35UPBF_15的Datasheet PDF文件第5页浏览型号IRG7PG35UPBF_15的Datasheet PDF文件第6页浏览型号IRG7PG35UPBF_15的Datasheet PDF文件第7页 
IRG7PG35UPbF  
IRG7PG35U-EPbF  
INSULATED GATE BIPOLAR TRANSISTOR  
Features  
 Low VCE (ON) trench IGBT technology  
 Low switching losses  
 Square RBSOA  
 100% of the parts tested for ILM  
 Positive VCE (ON) temperature co-efficient  
 Tight parameter distribution  
 Lead-free package  
C
Benefits  
 High efficiency in a wide range of applications  
 Suitable for a wide range of switching frequencies due to low  
V
CE(on) and low switching losses  
E
C
G
 Rugged transient performance for increased reliability  
 Excellent current sharing in parallel operation  
IRG7PG35U-EPbF  
TO-247AD  
Applications  
 U.P.S.  
 Welding  
 Solar Inverter  
 Induction heating  
G
Gate  
C
E
Collector  
Emitter  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRG7PG35UPbF  
IRG7PG35U-EPbF  
TO-247AC  
TO-247AD  
Tube  
Tube  
25  
25  
IRG7PG35UPbF  
IRG7PG35U-EPbF  
Absolute Maximum Ratings  
Parameter  
Collector-to-Emitter Voltage  
Continuous Collector Current (Silicon Limited)  
Max.  
1000  
55  
35  
60  
Units  
V
VCES  
IC @ TC = 25°C  
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)  
A
ICM  
ILM  
VGE  
Pulse Collector Current, VGE = 15V   
Clamped Inductive Load Current, VGE = 20V   
Continuous Gate-to-Emitter Voltage  
80  
±30  
V
PD @ TC = 25°C Maximum Power Dissipation  
PD @ TC = 100°C Maximum Power Dissipation  
210  
105  
W
TJ  
Operating Junction and  
-55 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
°C  
300 (0.063 in.(1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Mounting Torque, 6-32 or M3 Screw  
Thermal Resistance  
Parameter  
RθJC (IGBT) Junction-to-Case (IGBT)   
Min.  
–––  
–––  
–––  
Typ.  
–––  
0.24  
–––  
Max.  
0.70  
–––  
40  
Units  
°C/W  
RθCS  
RθJA  
Case-to-Sink (flat, greased surface)  
Junction-to-Ambient (typical socket mount)  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
April 14, 2014  

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