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IRG4ZC70UD

更新时间： 2024-11-24 23:13:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 231K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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IRG4ZC70UD 数据手册

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PD -9.1668A  
IRG4ZC70UD  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
Surface Mountable  
UltraFast CoPack IGBT  
C
n-channel  
● UltraFast IGBT optimized for high switching frequencies  
VCES = 600V  
● IGBT co-packaged with HEXFRED™ ultrafast,  
ultra-soft recovery antiparallel diodes for use in  
bridge configurations  
VCE( )typ = 1.5V  
ON  
● Low gate charge  
● Low profile low inductance SMD-10 package  
● Separated control & Power-connections for  
G
@VGE = 15V, IC = 50A  
E(k)  
E
easy paralleling  
● Inherently coplanar pins and tab  
● Easy solder inspection and cleaning  
Benefits  
● Highest power density and efficiency available  
● HEXFRED diodes optimized for performance with IGBTs;  
Minimized recovery characteristics  
● IGBTs optimized for specific application conditions; high input impedance  
requires low gate drive power  
● Low noise and interference  
SMD-10  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
V
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current ➀  
IC @ TC = 25°C  
100  
IC @ TC = 100°C  
50  
A
ICM  
400  
ILM  
Clamped Inductive Load Current ➁  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
400  
IF @ TC = 100°C  
50  
IFM  
400  
VGE  
± 20  
350  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
W
°C  
PD @ TC = 100°C Maximum Power Dissipation  
140  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
Thermal Resistance  
Parameter  
Min.  
—
Typ.  
—
Max.  
0.36  
0.69  
—
Units  
°C/W  
RθJC  
RθJC  
RθCS  
Wt  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
SMD-10 Case-to-Heatsink (typical), *  
Weight  
—
—
—
0.59  
—
6.0(0.21)  
—
g (oz)  
Notes: ➀ Repetitive rating: VGE = 20V; pulse width limited by  
➂ Pulse width ≤ 80µs; duty factor ≤ 0.1%.  
➃ Pulse width 5.0µs, single shot.  
maximum junction temperature (figure 20)  
➁ VCC = 80%(VCES), VGE = 20V, L=10µH, RG= 5.0Ω  
(figure 19)  
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.  
1234567...10

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