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IRG4ZC71KD PDF预览

IRG4ZC71KD

更新时间: 2024-11-11 03:09:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 226K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4ZC71KD 数据手册

 浏览型号IRG4ZC71KD的Datasheet PDF文件第2页浏览型号IRG4ZC71KD的Datasheet PDF文件第3页浏览型号IRG4ZC71KD的Datasheet PDF文件第4页浏览型号IRG4ZC71KD的Datasheet PDF文件第5页浏览型号IRG4ZC71KD的Datasheet PDF文件第6页浏览型号IRG4ZC71KD的Datasheet PDF文件第7页 
PD - 91723  
PRELIMINARY  
IRG4ZC71KD  
Surface Mountable  
Short Circuit Rated  
UltraFast IGBT  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
• High short circuit rating optimized for motor  
control, tsc =10µs, VCC = 360V , TJ = 125°C,  
C
n-channel  
VCES = 600V  
VGE = 15V  
• IGBT co-packaged with HEXFRED ultrafast,  
ultra-soft-recovery antiparallel diodes for use in  
bridge configurations  
• Combines low conduction losses with high  
switching speed  
VCE( )typ = 1.75V  
ON  
G
@VGE = 15V, IC = 60A  
E(k)  
• Low profile low inductance SMD-10 Package  
• Separated control & Power-connections for easy  
paralleling  
E
• Good coplanarity  
• Easy solder inspection and cleaning  
Benefits  
• Highest power density and efficiency available  
• HEXFRED Diodes optimized for performance with  
IGBTs. Minimized recovery characteristics  
• IGBTs optimized for specific application conditions  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
Gate-to-Emitter Voltage  
IC @ TC = 25°C  
100  
IC @ TC = 100°C  
60  
ICM  
200  
A
ILM  
200  
IF @ TC = 100°C  
50  
IFM  
200  
tsc  
10  
µs  
V
VGE  
± 20  
350  
PD @ TC = 25°C  
Maximum Power Dissipation  
W
PD @ TC = 100°C Maximum Power Dissipation  
140  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.36  
0.69  
–––  
Units  
°C/W  
RθJC  
RθJC  
RθCS  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
SMD-10 Case-to-Heatsink (typical), *  
Weight  
–––  
0.44  
6.0(0.21)  
–––  
g (oz)  
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.  
www.irf.com  
1

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Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,