Datasheet > IRG5W50HF06A

IRG5W50HF06A

更新时间： 2024-11-05 22:57:39

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
6页	854K
描述
MOD IGBT 600V 50A POWIR 34

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG5W50HF06A 数据手册

IRG5K50P5K50PM06E

IRG5W50HF06A

IGBT Half-Bridge

V_CES= 600V

I_C= 50A at T_C= 80⁰C

t_SC≥ 10µsec

POWIR 34^™Package

V_CE(ON)= 2.40V at I_C= 50A

Applications：



Industrial Motor Drive

Uninterruptible Power Supply

Welding and Cutting Machine

Switched Mode Power Supply

Induction Heating

AC Inverter Drive

Features

Benefits

Low V_CE(ON)and Switching Losses

100% RBSOA Tested

10µsec Short Circuit Safe Operating Area

POWIR 34^™Package

Lead Free

High Efficiency in a Wide Range of Applications

Rugged Transient Performance

Industry Standard

RoHS Compliant, Environmental Friendly

Base Part Number

Package Type

Standard Pack

Quantity

Orderable Part Number

IRG5W50HF06A

POWIR 34^™

Box

IRG5W50HF06A

Absolute Maximum Ratings of IGBT

V_CES

V_GES

Collector to Emitter Voltage

600

±20

Continuous Gate to Emitter Voltage

T_C= 80°C

T_C= 25°C

T_J= 150°C

I_C

Continuous Collector Current

I_CM

P_D

Pulse Collector Current

100

Maximum Power Dissipation (IGBT)

Maximum IGBT Junction Temperature

Maximum Operating Junction Temperature Range

Storage Temperature

T_C= 25°C, T_J= 150°C

260

°C

T_J

150

T_JOP

T_stg

-40 to +150

-40 to +125

Submit Datasheet Feedback October 1, 2014

12 3 4 5 6

中文翻译

下载PDF

与IRG5W50HF06A相关器件

型号	品牌	获取价格	描述	数据表
IRG6B330UDPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRG6I320UPBF	INFINEON	获取价格	PDP TRENCCH IGBT
IRG6I330UPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRG6IC30UPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRG6S320U	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG6S320UPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRG6S320UTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG6S320UTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRG6S320UTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG6S320UTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE