是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
风险等级: | 5 | 其他特性: | ULTRA FAST |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8.5 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 330 ns | 标称接通时间 (ton): | 32 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRG4RC10UPBF | INFINEON |
完全替代 |
暂无描述 | |
IRG4RC10UTR | INFINEON |
完全替代 |
暂无描述 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4RC10UTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IRG4RC10UTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IRG4RC20F | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A) | |
IRG4RC20FPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4RC20FTR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | |
IRG4RC20FTRL | INFINEON |
获取价格 |
暂无描述 | |
IRG4RC20FTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE | |
IRG4RC20FTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | |
IRG4ZC50KD | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel | |
IRG4ZC70UD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |