Datasheet > IRG4RC20FTR

IRG4RC20FTR

更新时间： 2024-11-11 20:11:15

品牌	Logo	应用领域
英飞凌 - INFINEON		栅功率控制晶体管
页数	文件大小	规格书
8页	265K
描述
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

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IRG4RC20FTR 数据手册

PD - 91731A

IRG4RC20F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Fast: Optimized for medium operating

frequencies (1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES= 600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation IGBTs.

V_{CE(on) typ.}= 1.82V

@V_GE= 15V, I_C= 12A

• Industry standard TO-252AA package

• Combines very low V_CE(on)with low switching

losses

N-channel

Benefits

• Generation 4 IGBTs offer highest efficiency

• Optimized for specific application conditions

• High power density and current rating

D-Pak

TO-252AA

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

5.0

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.9

Units

°C/W

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Weight

–––

0.3 (0.01)

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

2/22/01

12 3 4 5 6 7 8

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