Datasheet > 晶体管 > IGBT> IRG4RC10UDTRR

IRG4RC10UDTRR

更新时间： 2024-02-20 02:30:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	136K
描述
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

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技术参数
数据手册

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IRG4RC10UDTRR 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

IRG4RC10UDTRR 数据手册

PD 91735A

IRG4RC10K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10µs @ 125°C, V_GE= 15V

V_CES= 600V

• Generation 4 IGBT design provides higher efficiency

than Generation 3

V_{CE(on) typ.}= 2.39V

• Industry standard TO-252AA package

@V_GE= 15V, I_C= 5.0A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

D-PAK

TO-252AA

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

9.0

I_C@ T_C= 100°C

5.0

I_CM

I_LM

t_sc

µs

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (0.063 in. (1.6mm) from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

Units

°C/W

g (oz)

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Weight

–––

0.3 (0.01)

–––

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/30/00

12 3 4 5 6 7 8

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