Datasheet > IRG4RC10UDTRLPBF

IRG4RC10UDTRLPBF

更新时间： 2024-02-02 03:34:39

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
11页	302K
描述
Insulated Gate Bipolar Transistor,

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技术参数
数据手册

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IRG4RC10UDTRLPBF 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

IRG4RC10UDTRLPBF 数据手册

PD - 95328

IRG4RC10UDPbF

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

V_CES= 600V

UltraFast: Optimized for medium operating

frequencies ( 8-40 kHz in hard switching, >200

kHz in resonant mode).

V_{CE(on) typ.}= 2.15V

Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

IGBT co-packaged with HEXFRED^TMultrafast,

@V_GE= 15V, I_C= 5.0A

t_f(typ.) = 140ns

ultra-soft-recovery anti-parallel diodes for use

n-channel

bridge configurations

Industry standard TO-252AA package

Lead-Free

Benefits

Generation 4 IGBT's offer highest efficiencies

available

IGBT's optimized for specific application conditions

HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

D-PAK

Lower losses than MOSFET's conduction and Diode

TO-252AA

losses

Absolute Maximum Ratings

Parameter

Max.

600

8.5

5.0

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

I_F@ T_C= 100°C

4.0

I_FM

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating

P_D@ T_C= 100°C

T_J

Junction

and-55

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbfin (1.1 Nm)

Thermal Resistance

Parameter

Min.

Typ.

Max.

3.3

Units

°C/W

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient (PCB mount)*

Weight

7.0

0.3 (0.01)

g (oz)

Details of note through are on the last page

www.irf.com

6/2/04

12 3 4 5 6 7...11

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