是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, DPAK-3 | Reach Compliance Code: | compliant |
风险等级: | 5 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8.5 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 345 ns |
标称接通时间 (ton): | 56 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4RC10UDTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | |
IRG4RC10UDTRRP | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE | |
IRG4RC10UDTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IRG4RC10UPBF | INFINEON |
获取价格 |
暂无描述 | |
IRG4RC10UTR | INFINEON |
获取价格 |
暂无描述 | |
IRG4RC10UTRPBF | INFINEON |
获取价格 |
暂无描述 | |
IRG4RC10UTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IRG4RC10UTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IRG4RC20F | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A) | |
IRG4RC20FPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |