Datasheet > 晶体管 > IGBT> IRG4RC10UD

IRG4RC10UD

更新时间： 2024-02-02 12:27:54

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管功率控制瞄准线双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	192K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

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中文翻译

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技术参数
数据手册
替代型号

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IRG4RC10UD 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

IRG4RC10UD 数据手册

PD91571A

IRG4RC10UD

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• UltraFast: Optimized for medium operating

frequencies ( 8-40 kHz in hard switching, >200

kHz in resonant mode).

V_CES= 600V

V_{CE(on) typ.}= 2.15V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

@V_GE= 15V, I_C= 5.0A

t_f(typ.) = 140ns

n-channel

• Industry standard TO-252AA package

Benefits

• Generation 4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

D-PAK

• Lower losses than MOSFET's conduction and Diode

losses

TO-252AA

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

8.5

I_C@ T_C= 100°C

5.0

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

4.0

I_FM

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

Max.

3.3

Units

°C/W

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient (PCB mount)*

Weight

–––

7.0

–––

0.3 (0.01)

–––

g (oz)

Details of note through are on the last page

www.irf.com

12/30/00

12 3 4 5 6 7...10

中文翻译

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IRG4RC10UD 替代型号

型号	品牌	替代类型	描述	数据表
IRG4RC10UDTRRP	INFINEON	完全替代	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE
IRG4RC10UDTRLP	INFINEON	完全替代	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE
IRG4RC10UDPBF	INFINEON	完全替代	暂无描述

与IRG4RC10UD相关器件

型号	品牌	获取价格	描述	数据表
IRG4RC10UDPBF	INFINEON	获取价格	暂无描述
IRG4RC10UDTR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10UDTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10UDTRLP	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE
IRG4RC10UDTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRG4RC10UDTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE
IRG4RC10UDTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10UDTRRP	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE
IRG4RC10UDTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRG4RC10UPBF	INFINEON	获取价格	暂无描述

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