IRFZ48Z

更新时间： 2024-10-31 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	280K
描述
AUTOMOTIVE MOSFET

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IRFZ48Z 数据手册

PD - 94763

IRFZ48Z

AUTOMOTIVE MOSFET

IRFZ48ZS

Features

IRFZ48ZL

Advanced Process Technology

HEXFET^®Power MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 55V

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 11mΩ

Description

Specifically designed for Automotive applica-

tions,thisHEXFET^®PowerMOSFETutilizesthe

latestprocessingtechniquestoachieveextremely

low on-resistance per silicon area. Additional

features of this design are a 175°C junction

operatingtemperature, fastswitchingspeedand

improved repetitive avalanche rating . These

features combine to make this design an ex-

tremely efficient and reliable device for use in

Automotive applications and a wide variety of

other applications.

I_D= 61A

D²Pak

IRFZ48ZS

TO-262

IRFZ48ZL

TO-220AB

IRFZ48Z

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

Pulsed Drain Current

240

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.61

± 20

W/°C

Gate-to-Source Voltage

E_AS

120

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.12a,12b,15,16

E_AR

°C

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.64

–––

Units

R_θ

°C/W

Junction-to-Case

R_θ

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

08/27/03

12 3 4 5 6 7...12

中文翻译

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