5秒后页面跳转
IRFZ46NPBF PDF预览

IRFZ46NPBF

更新时间: 2024-09-15 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 186K
描述
HEXFET㈢ Power MOSFET

IRFZ46NPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:15 weeks风险等级:0.97
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):152 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):53 A
最大漏极电流 (ID):39 A最大漏源导通电阻:0.0165 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):250
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):107 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFZ46NPBF 数据手册

 浏览型号IRFZ46NPBF的Datasheet PDF文件第2页浏览型号IRFZ46NPBF的Datasheet PDF文件第3页浏览型号IRFZ46NPBF的Datasheet PDF文件第4页浏览型号IRFZ46NPBF的Datasheet PDF文件第5页浏览型号IRFZ46NPBF的Datasheet PDF文件第6页浏览型号IRFZ46NPBF的Datasheet PDF文件第7页 
PD - 94952  
IRFZ46NPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 16.5mΩ  
G
l Fully Avalanche Rated  
l Lead-Free  
‡
ID = 53A  
S
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220 contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
53‡  
37  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
180  
PD @TC = 25°C  
PowerDissipation  
107  
W
W/°C  
V
LinearDeratingFactor  
0.71  
VGS  
IAR  
Gate-to-SourceVoltage  
± 20  
AvalancheCurrent  
28  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
11  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.4  
–––  
62  
°C/W  
www.irf.com  
1
1/29/04  

IRFZ46NPBF 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFZ44N INFINEON

类似代替

Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Me
IRFZ44NPBF INFINEON

类似代替

HEXFET-R Power MOSFET
IRFZ46N INFINEON

功能相似

Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)

与IRFZ46NPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFZ46NS INFINEON

获取价格

HEXFET POWER MOSFET
IRFZ46NSPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFZ46NSTRL INFINEON

获取价格

HEXFET POWER MOSFET
IRFZ46NSTRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46NSTRR INFINEON

获取价格

HEXFET POWER MOSFET
IRFZ46NSTRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46S INFINEON

获取价格

HEXFET Power MOSFET
IRFZ46STRL INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFZ46STRR INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFZ46Z INFINEON

获取价格

AUTOMOTIVE MOSFET