Datasheet > IRFZ46NSTRRPBF

IRFZ46NSTRRPBF

更新时间： 2024-09-15 21:09:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	253K
描述
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRFZ46NSTRRPBF 数据手册

PD - 91305C

IRFZ46NS

IRFZ46NL

l Advanced Process Technology

l SurfaceMount(IRFZ46NS)

l Low-profilethrough-hole(IRFZ46NL)

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 55V

R_DS(on)= 0.0165Ω

l Fully Avalanche Rated

Description

I_D= 53A

Advanced HEXFET^®Power MOSFETs from International

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

devicedesignthatHEXFETpowerMOSFETsarewellknown

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodatingdiesizesuptoHEX-4.Itprovidesthehighest

power capability and the lowest possible on-resistance in

anyexistingsurfacemountpackage. TheD²Pakissuitable

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typicalsurfacemountapplication.

TO-262

Pak

The through-hole version (IRFZ46NL) is available for low-

profileapplications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

Power Dissipation

180

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

107

0.71

± 20

Linear Derating Factor

W/°C

V_GS

I_AR

Gate-to-Source Voltage

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

5.0

V/ns

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.4

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

www.irf.com

04/08/04

12 3 4 5 6 7...11

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