Datasheet > IRFZ46STRR

IRFZ46STRR

更新时间： 2024-09-15 21:10:51

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
10页	355K
描述
Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFZ46STRR 数据手册

PD - 9.922A

IRFZ46S/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRFZ46S)

l Low-profile through-hole (IRFZ46L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 50V

R_DS(on)= 0.024Ω

I_D= 72A

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ46L) is available for low-

profile applications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

220

3.7

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

150

1.0

Linear Derating Factor

W/°C

V_GS

E_AS

dv/dt

T_J

Gate-to-Source Voltage

± 20

100

4.5

Single Pulse Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-55 to + 175

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.0

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

8/25/97

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRFZ46STRR相关器件

型号	品牌	获取价格	描述	数据表
IRFZ46Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFZ46ZL	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFZ46ZLPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFZ46ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFZ46ZS	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFZ46ZSPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFZ46ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46ZSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me