5秒后页面跳转
IRFZ46ZS PDF预览

IRFZ46ZS

更新时间: 2024-11-24 22:15:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 282K
描述
AUTOMOTIVE MOSFET

IRFZ46ZS 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.58其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):97 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):51 A最大漏源导通电阻:0.0136 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFZ46ZS 数据手册

 浏览型号IRFZ46ZS的Datasheet PDF文件第2页浏览型号IRFZ46ZS的Datasheet PDF文件第3页浏览型号IRFZ46ZS的Datasheet PDF文件第4页浏览型号IRFZ46ZS的Datasheet PDF文件第5页浏览型号IRFZ46ZS的Datasheet PDF文件第6页浏览型号IRFZ46ZS的Datasheet PDF文件第7页 
PD - 94769  
IRFZ46Z  
AUTOMOTIVE MOSFET  
IRFZ46ZS  
Features  
IRFZ46ZL  
O
O
O
O
O
O
Advanced Process Technology  
HEXFET® Power MOSFET  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 55V  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 13.6mΩ  
Description  
G
Specifically designed for Automotive applica-  
tions,thisHEXFET® PowerMOSFETutilizesthe  
latestprocessingtechniquestoachieveextremely  
low on-resistance per silicon area. Additional  
features of this design are a 175°C junction  
operatingtemperature, fastswitchingspeedand  
improved repetitive avalanche rating . These  
features combine to make this design an ex-  
tremely efficient and reliable device for use in  
Automotive applications and a wide variety of  
other applications.  
ID = 51A  
S
D2Pak  
IRFZ46ZS  
TO-262  
IRFZ46ZL  
TO-220AB  
IRFZ46Z  
Absolute Maximum Ratings  
Parameter  
Max.  
51  
Units  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
Pulsed Drain Current  
D
D
36  
200  
82  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
0.54  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
63  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (tested)  
97  
IAR  
EAR  
See Fig.12a,12b,15,16  
A
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.84  
–––  
62  
Units  
Rθ  
°C/W  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
09/12/03  

IRFZ46ZS 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ46ZSPBF INFINEON

类似代替

AUTOMOTIVE MOSFET
IPD50N06S214ATMA1 INFINEON

功能相似

Power Field-Effect Transistor, 50A I(D), 55V, 0.0144ohm, 1-Element, N-Channel, Silicon, Me
SUD35N05-26L-E3 VISHAY

功能相似

Power Field-Effect Transistor, 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se

与IRFZ46ZS相关器件

型号 品牌 获取价格 描述 数据表
IRFZ46ZSPBF INFINEON

获取价格

AUTOMOTIVE MOSFET
IRFZ46ZSTRL INFINEON

获取价格

Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46ZSTRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46ZSTRR INFINEON

获取价格

Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46ZSTRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ48 NXP

获取价格

N-channel enhancement mode TrenchMOS transistor
IRFZ48 INFINEON

获取价格

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)
IRFZ48 VISHAY

获取价格

Power MOSFET
IRFZ48_11 VISHAY

获取价格

Power MOSFET
IRFZ48L INFINEON

获取价格

HEXFET Power MOSFET