是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC, D2PAK-3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.26 |
其他特性: | AVALANCHE RATED, HIGH RELIABILITY | 雪崩能效等级(Eas): | 190 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (Abs) (ID): | 64 A |
最大漏极电流 (ID): | 64 A | 最大漏源导通电阻: | 0.014 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 130 W | 最大脉冲漏极电流 (IDM): | 210 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFZ48NSTRLPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
IRFZ48NS | INFINEON |
功能相似 |
Advanced Process Technology |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFZ48NSTRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
IRFZ48NSTRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
IRFZ48NSTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
IRFZ48PBF | INFINEON |
获取价格 |
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = | |
IRFZ48PBF | VISHAY |
获取价格 |
Power MOSFET | |
IRFZ48R | VISHAY |
获取价格 |
Power MOSFET | |
IRFZ48R | INFINEON |
获取价格 |
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) | |
IRFZ48RL | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRFZ48RL | VISHAY |
获取价格 |
Power MOSFET | |
IRFZ48RLPBF | INFINEON |
获取价格 |
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = |