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IRFZ48NSPBF PDF预览

IRFZ48NSPBF

更新时间: 2024-11-06 03:12:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 298K
描述
HEXFET Power MOSFET

IRFZ48NSPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.26
其他特性:AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级(Eas):190 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):64 A
最大漏极电流 (ID):64 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):130 W最大脉冲漏极电流 (IDM):210 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON

IRFZ48NSPBF 数据手册

 浏览型号IRFZ48NSPBF的Datasheet PDF文件第2页浏览型号IRFZ48NSPBF的Datasheet PDF文件第3页浏览型号IRFZ48NSPBF的Datasheet PDF文件第4页浏览型号IRFZ48NSPBF的Datasheet PDF文件第5页浏览型号IRFZ48NSPBF的Datasheet PDF文件第6页浏览型号IRFZ48NSPBF的Datasheet PDF文件第7页 
PD - 95125  
IRFZ48NSPbF  
IRFZ48NLPbF  
l Advanced Process Technology  
l SurfaceMount(IRFZ48NS)  
l Low-profilethrough-hole(IRFZ48NL)  
l 175°COperatingTemperature  
l Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 55V  
l Fully Avalanche Rated  
l Lead-Free  
RDS(on) = 0.014Ω  
Description  
G
Advanced HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFETpowerMOSFETsarewellknownfor,provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications.  
ID = 64A  
S
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highestpowercapabilityandthelowestpossibleon-resistance  
in any existing surface mount package. The D2Pak is  
suitable for high current applications because of its low  
internalconnectionresistanceandcandissipateupto2.0W  
inatypicalsurfacemountapplication.  
2
TO-262  
D
Pak  
Thethrough-holeversion(IRFZ48NL)isavailableforlow-  
profileapplications.  
Absolute Maximum Ratings  
Parameter  
Max.  
64  
45  
210  
3.8  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
W
W
Power Dissipation  
130  
0.83  
± 20  
32  
Linear Derating Factor  
W/°C  
V
VGS  
IAR  
Gate-to-Source Voltage  
Avalanche Current  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
13  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typꢀ  
–––  
–––  
Maxꢀ  
1.15  
Units  
RqJC  
°C/W  
RqJA  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
40  
www.irf.com  
1
3/18/04  

IRFZ48NSPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ48NSTRLPBF INFINEON

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Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
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功能相似

Advanced Process Technology

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