Datasheet > IRFZ48RS_11

IRFZ48RS_11

更新时间： 2024-09-16 11:09:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	208K
描述
Power MOSFET

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数据手册

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IRFZ48RS_11 数据手册

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

R_DS(on)()

V_GS= 10 V

0.018

• Dynamic dV/dt

• 175 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ48, SiHFZ48 for

Linear/Audio Applications

Q_g(Max.) (nC)

Q_gs(nC)

110

_gd(nC)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D²PAK (TO-263)

I²PAK (TO-262)

Advanced Power MOSFETs from Vishay utilize advanced

processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

SiHFZ48RS-GE3

IRFZ48RSPbF

SiHFZ48RS-E3

I²PAK (TO-262)

IRFZ48RLPbF

SiHFZ48RL-E3

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V_DS

LIMIT

UNIT

V_GS

_C= 25 °C

290

Continuous Drain Current^e

V_GSat 10 V

I_D

_C= 100 °C

Pulsed Drain Current^{a, e}

I_DM

Linear Derating Factor

W/°C

1.3

100

190

4.5

Single Pulse Avalanche Energy^{b, e}

E_AS

P_D

dV/dt

T_J, T_stg

Maximum Power Dissipation

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

_C= 25 °C

V/ns

- 55 to + 175

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, Starting T_J= 25 °C, L = 22 μH, R_g= 25 , I_AS= 72 A (see fig. 12).

c. I_SD 72 A, dI/dt  200 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. Current limited by the package, (die current = 72 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91296

S11-1054-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFZ48RS_11相关器件

型号	品牌	获取价格	描述	数据表
IRFZ48RSPBF	VISHAY	获取价格	Power MOSFET
IRFZ48RSPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) =
IRFZ48RSTRL	INFINEON	获取价格	暂无描述
IRFZ48RSTRLPBF	VISHAY	获取价格	暂无描述
IRFZ48RSTRR	VISHAY	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48S	VISHAY	获取价格	Power MOSFET
IRFZ48S	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ48S, SiHFZ48S, SiHFZ48L	VISHAY	获取价格	Power MOSFET
IRFZ48S_11	VISHAY	获取价格	Power MOSFET
IRFZ48SPBF	VISHAY	获取价格	Power MOSFET

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