Datasheet > IRFZ48S_11

IRFZ48S_11

更新时间： 2024-10-30 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	357K
描述
Power MOSFET

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数据手册

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IRFZ48S_11 数据手册

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount (IRFZ48S, SiHFZ48S)

• Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)

• 175 °C Operating Temperature

• Fast Switching

_DS(on)()

V_GS= 10 V

0.018

Q_g(Max.) (nC)

110

_gs(nC)

_gd(nC)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D²PAK (TO-263)

I²PAK (TO-262)

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.

N-Channel MOSFET

The through-hole version (IRFZ48L, SiHFZ48L) is available

for low-profile applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

I²PAK (TO-262)

IRFZ48LPbF

SiHFZ48L-E3

SiHFZ48S-GE3

IRFZ48SPbF

SiHFZ48S-E3

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V_DS

LIMIT

UNIT

V_GS

_C= 25 °C

290

Continuous Drain Current^f

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^{a, e}

I_DM

Linear Derating Factor

1.3

100

190

3.7

W/°C

Single Pulse Avalanche Energy^{b, e}

E_AS

P_D

_C= 25 °C

Maximum Power Dissipation

V/ns

°C

T_A= 25 °C

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

dV/dt

T_J, T_stg

4.5

- 55 to + 175

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, Starting T_J= 25 °C, L = 22 μH, R_g= 25 , I_AS= 72 A (see fig. 12).

c. I_SD 72 A, dI/dt  200 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. Uses IRFZ48, SiHFZ48 data and test conditions.

f. Calculated continuous current based on maximum allowable junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90377

S11-1045-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFZ48S_11相关器件

型号	品牌	获取价格	描述	数据表
IRFZ48SPBF	VISHAY	获取价格	Power MOSFET
IRFZ48STRL	VISHAY	获取价格	Power MOSFET
IRFZ48STRL	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48STRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 50A I(D) \| TO-263AB
IRFZ48STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFZ48V	INFINEON	获取价格	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
IRFZ48V	KERSEMI	获取价格	HEXFET Power MOSFET
IRFZ48VPBF	KERSEMI	获取价格	Advanced Process Technology
IRFZ48VPBF	INFINEON	获取价格	Advanced Process Technology
IRFZ48VS	INFINEON	获取价格	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)

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