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IRFZ48RSTRL PDF预览

IRFZ48RSTRL

更新时间: 2024-11-06 13:08:51
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英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
8页 138K
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IRFZ48RSTRL 数据手册

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PD - 93958  
IRFZ48R  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 60V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 0.018Ω  
G
l Fully Avalanche Rated  
l Drop in Replacement of the IRFZ48  
for Linear/Audio Applications  
ID = 50*A  
S
Description  
Advanced HEXFET® Power MOSFETs from International  
Rectifier utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely efficient  
and reliable device for use in a wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrialapplicationsatpowerdissipationlevels  
to approximately 50 watts. The low thermal resistance and  
low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
50*  
50*  
290  
190  
1.3  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
100  
50  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
19  
mJ  
V/ns  
4.5  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.8  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
8/24/00  

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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-263AB