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IRFZ48RS PDF预览

IRFZ48RS

更新时间: 2024-09-16 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 176K
描述
HEXFET Power MOSFET

IRFZ48RS 数据手册

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PD - 94074  
IRFZ48RS  
IRFZ48RL  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
D
VDSS = 60V  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
RDS(on) = 0.018Ω  
G
l Drop in Replacement of the IRFZ48  
for Linear/Audio Applications  
ID = 50*A  
S
Description  
Advanced HEXFET® Power MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve extremely low on-  
resistance per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer with an extremely  
efficient and reliable device for use in a wide variety of applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the highest power  
capability and the lowest possible on-resistance in any existing  
surface mount package. The D2Pak is suitable for high current  
applications because of its low internal connection resistance and can  
dissipate up to 2.0W in a typical surface mount application.  
D2Pak  
IRFZ48RS  
TO-262  
IRFZ44RL  
Absolute Maximum Ratings  
Parameter  
Max.  
50*  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
50*  
A
290  
PD @TC = 25°C  
Power Dissipation  
190  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
EAS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energy‚  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
100  
mJ  
4.5  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.8  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
05/21/02  

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