PD - 94074
IRFZ48RS
IRFZ48RL
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
D
VDSS = 60V
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 0.018Ω
G
l Drop in Replacement of the IRFZ48
for Linear/Audio Applications
ID = 50*A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
D2Pak
IRFZ48RS
TO-262
IRFZ44RL
Absolute Maximum Ratings
Parameter
Max.
50*
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
50*
A
290
PD @TC = 25°C
Power Dissipation
190
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
100
mJ
4.5
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.8
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
www.irf.com
1
05/21/02