IRFZ48NSTRR

更新时间： 2024-11-06 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关局域网
页数	文件大小	规格书
8页	138K
描述
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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替代型号

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IRFZ48NSTRR 数据手册

PD - 93958

IRFZ48R

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 60V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 0.018Ω

l Fully Avalanche Rated

l Drop in Replacement of the IRFZ48

for Linear/Audio Applications

I_D= 50*A

Description

Advanced HEXFET^®Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

50*

290

190

1.3

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

100

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.5

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.8

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

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IRFZ48NSTRR 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ48NSTRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met

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