Datasheet > IRFZ48NSTRRPBF

IRFZ48NSTRRPBF

更新时间： 2024-11-09 21:12:23

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	129K
描述
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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替代型号

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IRFZ48NSTRRPBF 数据手册

PD - 9.1408B

IRFZ48NS

IRFZ48NL

l Advanced Process Technology

l Surface Mount (IRFZ48NS)

l Low-profile through-hole (IRFZ48NL)

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 55V

l Fully Avalanche Rated

Description

R_DS(on)= 0.014Ω

Advanced HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFETpowerMOSFETsarewellknownfor,provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

I_D= 64A

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highestpowercapabilityandthelowestpossibleon-resistance

in any existing surface mount package. The D²Pak is

suitable for high current applications because of its low

internalconnectionresistanceandcandissipateupto2.0W

inatypicalsurfacemountapplication.

T O -262

Pak

Thethrough-holeversion(IRFZ48NL)isavailableforlow-

profileapplications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

210

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

130

0.83

± 20

Linear Derating Factor

W/°C

V_GS

I_AR

Gate-to-Source Voltage

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.15

Units

R_qJC

°C/W

R_qJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

www.irf.com

03/12/01

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IRFZ48NSTRRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ48NSTRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met

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