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IRFZ48NSTRRPBF PDF预览

IRFZ48NSTRRPBF

更新时间: 2024-11-06 21:12:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 129K
描述
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRFZ48NSTRRPBF 数据手册

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PD - 9.1408B  
IRFZ48NS  
IRFZ48NL  
l Advanced Process Technology  
l Surface Mount (IRFZ48NS)  
l Low-profile through-hole (IRFZ48NL)  
l 175°C Operating Temperature  
l Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 55V  
l Fully Avalanche Rated  
Description  
RDS(on) = 0.014Ω  
G
Advanced HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFETpowerMOSFETsarewellknownfor,provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications.  
ID = 64A  
S
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highestpowercapabilityandthelowestpossibleon-resistance  
in any existing surface mount package. The D2Pak is  
suitable for high current applications because of its low  
internalconnectionresistanceandcandissipateupto2.0W  
inatypicalsurfacemountapplication.  
2
T O -262  
D
Pak  
Thethrough-holeversion(IRFZ48NL)isavailableforlow-  
profileapplications.  
Absolute Maximum Ratings  
Parameter  
Max.  
64  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
45  
A
210  
3.8  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
W
W
Power Dissipation  
130  
0.83  
± 20  
32  
Linear Derating Factor  
W/°C  
V
VGS  
IAR  
Gate-to-Source Voltage  
Avalanche Current  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
13  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
Max.  
1.15  
Units  
RqJC  
°C/W  
RqJA  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
40  
www.irf.com  
1
03/12/01  

IRFZ48NSTRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ48NSTRLPBF INFINEON

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Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met

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