PD - 9.1408B
IRFZ48NS
IRFZ48NL
l Advanced Process Technology
l Surface Mount (IRFZ48NS)
l Low-profile through-hole (IRFZ48NL)
l 175°C Operating Temperature
l Fast Switching
HEXFET® Power MOSFET
D
VDSS = 55V
l Fully Avalanche Rated
Description
RDS(on) = 0.014Ω
G
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFETpowerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
ID = 64A
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internalconnectionresistanceandcandissipateupto2.0W
inatypicalsurfacemountapplication.
2
T O -262
D
Pak
Thethrough-holeversion(IRFZ48NL)isavailableforlow-
profileapplications.
Absolute Maximum Ratings
Parameter
Max.
64
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
45
A
210
3.8
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
130
0.83
± 20
32
Linear Derating Factor
W/°C
V
VGS
IAR
Gate-to-Source Voltage
Avalanche Current
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
13
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
1.15
Units
RqJC
°C/W
RqJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
www.irf.com
1
03/12/01