Datasheet > IRFZ48_11

IRFZ48_11

更新时间： 2024-09-15 11:09:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1520K
描述
Power MOSFET

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IRFZ48_11 数据手册

IRFZ48, SiHFZ48

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Repetitive Avalanche Rated

• Ultra Low On-Resistance

• Very Low Thermal Resistance

• 175 °C Operating Temperature

• Fast Switching

R_DS(on)(Ω)

V_GS= 10 V

0.018

RoHS*

COMPLIANT

Q_g(Max.) (nC)

110

_gs(nC)

_gd(nC)

Configuration

Single

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRFZ48PbF

SiHFZ48-E3

IRFZ48

Lead (Pb)-free

SnPb

SiHFZ48

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

_C= 100 °C

Continuous Drain Current^e

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

290

Linear Derating Factor

1.3

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

100

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

190

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

- 55 to + 175

°C

for 10 s

6-32 or M3 screw

300

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 22 μH, R_g= 25 Ω I_AS= 72 A (see fig. 12).

c. I_SD≤ 72 A, dI/dt ≤ 200 A/μs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case

e. Current limited by the package, (die current = 72 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91294

S11-0518-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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