Datasheet > IRFZ48N

IRFZ48N

更新时间： 2024-09-15 05:39:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	121K
描述
isc N-Channel MOSFET Transistor

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IRFZ48N 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

IRFZ48N

FEATURES

·Drain Current –I_D= 64A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 55V(Min)

·Static Drain-Source On-Resistance

: R_DS(on)= 0.014Ω(Max)

·Fast Switching

DESCRIPTION

·Designed for use in switch mode power supplies and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

UNIT

Drain-Source Voltage

Gate-Source Voltage-Continuous

Drain Current-Continuous

±20

I_DM

Drain Current-Single Pluse

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

210

P_D

130

℃

175

T_J

-55~175

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.15

UNIT

℃/W

R_{th j-c}

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-a}

isc Website：www.iscsemi.cn

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