IRFZ48NLPBF

更新时间： 2024-11-06 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	298K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFZ48NLPBF 数据手册

PD - 95125

IRFZ48NSPbF

IRFZ48NLPbF

l Advanced Process Technology

l SurfaceMount(IRFZ48NS)

l Low-profilethrough-hole(IRFZ48NL)

l 175°COperatingTemperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 55V

l Fully Avalanche Rated

l Lead-Free

R_DS(on)= 0.014Ω

Description

Advanced HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFETpowerMOSFETsarewellknownfor,provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

I_D= 64A

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highestpowercapabilityandthelowestpossibleon-resistance

in any existing surface mount package. The D²Pak is

suitable for high current applications because of its low

internalconnectionresistanceandcandissipateupto2.0W

inatypicalsurfacemountapplication.

TO-262

Pak

Thethrough-holeversion(IRFZ48NL)isavailableforlow-

profileapplications.

Absolute Maximum Ratings

Parameter

Max.

210

3.8

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

130

0.83

± 20

Linear Derating Factor

W/°C

V_GS

I_AR

Gate-to-Source Voltage

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typꢀ

–––

Maxꢀ

1.15

Units

R_qJC

°C/W

R_qJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

www.irf.com

3/18/04

12 3 4 5 6 7...10

中文翻译

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与IRFZ48NLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFZ48NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ48NS	INFINEON	获取价格	Advanced Process Technology
IRFZ48NSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ48NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) =
IRFZ48PBF	VISHAY	获取价格	Power MOSFET
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