PD - 9.894A
IRFZ48S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ48S)
l Low-profile through-hole (IRFZ48L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 60V
RDS(on) = 0.018Ω
G
ID = 50A
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ48L) is available for low-
profile applications.
2
D
Pa k
T O -2 6 2
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10Vꢀ
50
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
Power Dissipation
50
A
290
3.7
PD @TA = 25°C
PD @TC = 25°C
W
W
Power Dissipation
190
1.3
Linear Derating Factor
W/°C
V
VGS
EAS
dv/dt
TJ
Gate-to-Source Voltage
± 20
100
4.5
Single Pulse Avalanche Energyꢀ
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
mJ
V/ns
-55 to + 175
°C
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.80
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
8/25/97