IRFZ48N

更新时间： 2024-09-15 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	102K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFZ48N 数据手册

PD - 91406

IRFZ48N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 55V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 14mΩ

l Fully Avalanche Rated

I_D= 64A

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

210

P_D@T_C= 25°C

Power Dissipation

130

W/°C

Linear Derating Factor

0.83

± 20

V_GS

I_AR

Gate-to-Source Voltage

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

1.15

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

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中文翻译

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IRFZ48N 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFZ48N	INFINEON	功能相似	汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO
IRFZ48NPBF	INFINEON	功能相似	HEXFET Power MOSFET
IRFZ48N	NXP	功能相似	N-channel enhancement mode TrenchMOS transistor

与IRFZ48N相关器件

型号	品牌	获取价格	描述	数据表
IRFZ48NL	INFINEON	获取价格	Advanced Process Technology
IRFZ48NLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ48NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ48NS	INFINEON	获取价格	Advanced Process Technology
IRFZ48NSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ48NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRFZ48PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) =
IRFZ48PBF	VISHAY	获取价格	Power MOSFET