5秒后页面跳转
IRFZ46ZSTRR PDF预览

IRFZ46ZSTRR

更新时间: 2024-11-05 21:02:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 375K
描述
Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

IRFZ46ZSTRR 数据手册

 浏览型号IRFZ46ZSTRR的Datasheet PDF文件第2页浏览型号IRFZ46ZSTRR的Datasheet PDF文件第3页浏览型号IRFZ46ZSTRR的Datasheet PDF文件第4页浏览型号IRFZ46ZSTRR的Datasheet PDF文件第5页浏览型号IRFZ46ZSTRR的Datasheet PDF文件第6页浏览型号IRFZ46ZSTRR的Datasheet PDF文件第7页 
PD - 95562A  
IRFZ46ZPbF  
IRFZ46ZSPbF  
Features  
IRFZ46ZLPbF  
Advanced Process Technology  
HEXFET® Power MOSFET  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 55V  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
RDS(on) = 13.6mΩ  
G
Description  
ID = 51A  
S
ThisHEXFET® PowerMOSFETutilizesthelatest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating. These features  
combinetomakethisdesignanextremelyefficient  
and reliable device for use in a wide variety of  
applications.  
D2Pak  
IRFZ46ZSPbF IRFZ46ZLPbF  
TO-262  
TO-220AB  
IRFZ46ZPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
51  
Units  
A
I
I
I
@ TC = 25°C  
@ TC = 100°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
36  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
Pulsed Drain Current  
200  
82  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
0.54  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
63  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (tested)  
97  
IAR  
EAR  
See Fig.12a,12b,15,16  
A
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.84  
–––  
62  
Units  
°C/W  
Rθ  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
09/21/10  

与IRFZ46ZSTRR相关器件

型号 品牌 获取价格 描述 数据表
IRFZ46ZSTRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Me
IRFZ48 NXP

获取价格

N-channel enhancement mode TrenchMOS transistor
IRFZ48 INFINEON

获取价格

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)
IRFZ48 VISHAY

获取价格

Power MOSFET
IRFZ48_11 VISHAY

获取价格

Power MOSFET
IRFZ48L INFINEON

获取价格

HEXFET Power MOSFET
IRFZ48L VISHAY

获取价格

Power MOSFET
IRFZ48LPBF VISHAY

获取价格

Power MOSFET
IRFZ48N ISC

获取价格

isc N-Channel MOSFET Transistor
IRFZ48N INFINEON

获取价格

HEXFET Power MOSFET