PD - 95562A
IRFZ46ZPbF
IRFZ46ZSPbF
Features
IRFZ46ZLPbF
Advanced Process Technology
HEXFET® Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
D
VDSS = 55V
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 13.6mΩ
G
Description
ID = 51A
S
ThisHEXFET® PowerMOSFETutilizesthelatest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combinetomakethisdesignanextremelyefficient
and reliable device for use in a wide variety of
applications.
D2Pak
IRFZ46ZSPbF IRFZ46ZLPbF
TO-262
TO-220AB
IRFZ46ZPbF
Absolute Maximum Ratings
Parameter
Max.
51
Units
A
I
I
I
@ TC = 25°C
@ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
D
36
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Pulsed Drain Current
200
82
DM
P
@TC = 25°C
W
Maximum Power Dissipation
D
Linear Derating Factor
0.54
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
63
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (tested)
97
IAR
EAR
See Fig.12a,12b,15,16
A
mJ
°C
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.84
–––
62
Units
°C/W
Rθ
JC
CS
JA
JA
Junction-to-Case
Rθ
Rθ
Rθ
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
09/21/10