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IRFZ46N PDF预览

IRFZ46N

更新时间: 2024-11-08 22:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 87K
描述
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)

IRFZ46N 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.8配置:Single
最大漏极电流 (Abs) (ID):43 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):83 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

IRFZ46N 数据手册

 浏览型号IRFZ46N的Datasheet PDF文件第2页浏览型号IRFZ46N的Datasheet PDF文件第3页浏览型号IRFZ46N的Datasheet PDF文件第4页浏览型号IRFZ46N的Datasheet PDF文件第5页浏览型号IRFZ46N的Datasheet PDF文件第6页浏览型号IRFZ46N的Datasheet PDF文件第7页 
PD-91277  
IRFZ46N  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 55V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 16.5mΩ  
G
l Fully Avalanche Rated  
ID = 53A  
S
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220 contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
53  
37  
180  
A
PD @TC = 25°C  
PowerDissipation  
107  
W
W/°C  
V
LinearDeratingFactor  
0.71  
VGS  
IAR  
Gate-to-SourceVoltage  
± 20  
AvalancheCurrent  
28  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
11  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbfin (1.1Nm)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.4  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
01/24/01  

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