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IRFZ46NLPBF PDF预览

IRFZ46NLPBF

更新时间: 2024-09-14 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
10页 678K
描述
HEXFET Power MOSFET

IRFZ46NLPBF 数据手册

 浏览型号IRFZ46NLPBF的Datasheet PDF文件第2页浏览型号IRFZ46NLPBF的Datasheet PDF文件第3页浏览型号IRFZ46NLPBF的Datasheet PDF文件第4页浏览型号IRFZ46NLPBF的Datasheet PDF文件第5页浏览型号IRFZ46NLPBF的Datasheet PDF文件第6页浏览型号IRFZ46NLPBF的Datasheet PDF文件第7页 
PD - 95158  
IRFZ46NSPbF  
IRFZ46NLPbF  
l Advanced Process Technology  
l Surface Mount (IRFZ46NS)  
l Low-profilethrough-hole(IRFZ46NL)  
l 175°C Operating Temperature  
l Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 55V  
l Fully Avalanche Rated  
l Lead-Free  
RDS(on) = 0.0165Ω  
G
Description  
ˆ
ID = 53A  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
devicedesignthatHEXFETpowerMOSFETsarewellknown  
for, provides the designer with an extremely efficient and  
reliable device for use in a wide variety of applications.  
S
The D2Pak is a surface mount power package capable of  
accommodatingdiesizesuptoHEX-4.Itprovidesthehighest  
power capability and the lowest possible on-resistance in  
anyexistingsurfacemountpackage.TheD2Pakissuitable  
for high current applications because of its low internal  
connection resistance and can dissipate up to 2.0W in a  
typicalsurfacemountapplication.  
2
T O -262  
D
Pak  
Thethrough-holeversion(IRFZ46NL)isavailableforlow-  
profileapplications.  
Absolute Maximum Ratings  
Parameter  
Max.  
53 ˆ  
37  
180  
3.8  
107  
0.71  
± 20  
28  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
Power Dissipation  
A
PD @TA = 25°C  
PD @TC = 25°C  
W
W
Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
IAR  
Gate-to-Source Voltage  
Avalanche Current  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
11  
mJ  
5.0  
V/ns  
-55 to + 175  
300 (1.6mm from case )  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
Typ.  
–––  
–––  
Max.  
1.4  
40  
Units  
RθJC  
RθJA  
°C/W  
www.irf.com  
1
04/22/04  

IRFZ46NLPBF 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFZ46NL INFINEON

类似代替

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
IRFZ46NL INFINEON

类似代替

HEXFET POWER MOSFET

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