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IRFL024ZTRPBF

更新时间： 2024-11-16 12:28:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	269K
描述
Advanced Process Technology

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IRFL024ZTRPBF 数据手册

PD - 95312A

IRFL024ZPbF

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 55V

UltraLowOn-Resistance

150°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 57.5mΩ

I_D= 5.1A

Description

This HEXFET^®Power MOSFET utilizes the latest

processingtechniquestoachieveextremelylowon-

resistance per silicon area. Additional features of

thisdesign area150°Cjunctionoperatingtemperature,

fast switching speed and improved repetitive

avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledevice

for use in a wide variety of applications.

SOT-223

Absolute Maximum Ratings

Parameter

Max.

5.1

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

4.1

2.8

Power Dissipation

@T_A= 25°C

1.0

Power Dissipation

W/°C

0.02

± 20

Linear Derating Factor

Gate-to-Source Voltage

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

STG

Thermal Resistance

Parameter

Typ.

–––

Max.

Units

R_θ

Junction-to-Ambient (PCB mount, steady state)

°C/W

Junction-to-Ambient (PCB mount, steady state)

–––

120

www.irf.com

09/16/10

12 3 4 5 6 7...10

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IRFL024ZTRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFL024ZPBF	INFINEON	功能相似	HEXFET Power MOSFET

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