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IRFL024NTR

更新时间： 2024-11-15 23:58:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
8页 140K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 4A I(D) | SOT-223

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PD - 91861A  
IRFL024N  
HEXFET® Power MOSFET  
l Surface Mount  
D
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l Fast Switching  
VDSS = 55V  
RDS(on) = 0.075Ω  
G
l Fully Avalanche Rated  
ID = 2.8A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremelylow on-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The SOT-223 package is designed for surface-mount  
usingvaporphase,infrared,orwavesolderingtechniques.  
Its unique package design allows for easy automatic pick-  
and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performance  
due to an enlarged tab for heatsinking. Power dissipation  
of 1.0W is possible in a typical surface mount application.  
S O T -223  
Absolute Maximum Ratings  
Parameter  
Max.  
4.0  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V**  
Continuous Drain Current, VGS @ 10V*  
Continuous Drain Current, VGS @ 10V*  
Pulsed Drain Current   
2.8  
A
2.3  
11.2  
2.1  
PD @TA = 25°C  
PD @TA = 25°C  
Power Dissipation (PCB Mount)**  
Power Dissipation (PCB Mount)*  
Linear Derating Factor (PCB Mount)*  
Gate-to-Source Voltage  
W
W
1.0  
8.3  
mW/°C  
V
VGS  
± 20  
214  
EAS  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
IAR  
2.8  
EAR  
Repetitive Avalanche Energy*  
Peak Diode Recovery dv/dt ƒ  
0.1  
mJ  
V/ns  
°C  
dv/dt  
TJ, TSTG  
5.0  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Amb. (PCB Mount, steady state)*  
Typ.  
90  
Max.  
120  
Units  
RθJA  
RθJA  
°C/W  
Junction-to-Amb. (PCB Mount, steady state)**  
50  
60  
* When mounted on FR-4 board using minimum recommended footprint.  
** When mounted on 1 inch square copper board, for comparison with other SMD devices.  
www.irf.com  
1
6/15/99  
Powered by ICminer.com Electronic-Library Service CopyRight 2003  
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