Datasheet > IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

更新时间： 2024-10-17 14:55:51

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威世 - VISHAY		/
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Power MOSFET

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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L 数据手册

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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount (IRFBC40S, SiHFBC40S)

D²PAK (TO-263)

I²PAK (TO-262)

•

Low-profile through-hole (IRFBC40L, SiHFBC40L)

Available in tape and reel (IRFBC40S, SiHFBC40S)

Available

• Dynamic dV/dt rating

• 150 °C operating temperature

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

600

1.2

R_DS(on)()

V_GS= 10 V

DESCRIPTION

Q_gmax. (nC)

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

_gs(nC)

_gd(nC)

8.3

The D²PAK is a surface-mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface-mount application. The

through-hole version (IRFBC40L, SiHFBC40L) is available

for low-profile applications.

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free SiHFBC40S-GE3

Lead (Pb)-free IRFBC40SPbF

Note

D²PAK (TO-263)

SiHFBC40STRL-GE3 ^a

IRFBC40STRLPbF ^a

I²PAK (TO-262)

SiHFBC40L-GE3

IRFBC40LPbF

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage ^e

Gate-source voltage ^e

SYMBOL

LIMIT

600

UNIT

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

6.2

3.9

Continuous drain current

V_GSat 10 V

I_D

Pulsed drain current ^{a, e}

I_DM

Linear derating factor

1.0

570

6.2

W/°C

Single pulse avalanche energy ^{b, e}

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

E_AS

I_AR

E_AR

T_C= 25 °C

T_A= 25 °C

130

3.1

3.0

-55 to +150

300

Maximum power dissipation

P_D

V/ns

°C

Peak diode recovery dV/dt ^{c, e}

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

dV/dt

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V; starting T_J= 25 °C, L = 27 mH, R_g= 25 , I_AS= 6.2 A (see fig. 12)

c. I_SD 6.2 A, dI/dt  80 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. Uses IRFBC40, SiHFBC40 data and test conditions

S21-0943-Rev. D, 20-Sep-2021

Document Number: 91116

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L相关器件

型号	品牌	获取价格	描述	数据表
IRFBC40SPBF	VISHAY	获取价格	Power MOSFET
IRFBC40SPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBC40STRL	VISHAY	获取价格	Power MOSFET
IRFBC40STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBC40STRR	VISHAY	获取价格	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFBC40STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFBC42	HARRIS	获取价格	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
IRFBC42-010	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
IRFBC42R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 5.4A I(D) \| TO-220AB
IRFBE20	INFINEON	获取价格	Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)

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