Datasheet > IRFB7730PBF

IRFB7730PBF

更新时间： 2024-11-20 20:59:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	662K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IRFB7730PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	15 weeks	风险等级：	1.16
Samacsys Description：	MOSFET 75V Single N-Channel HEXFET Power	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IRFB7730PBF 数据手册

StrongIRFET™

IRFB7730PbF

IRFS7730PbF

IRFSL7730PbF

HEXFET^®Power MOSFET

Application

 Brushed motor drive applications

 BLDC motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC inverters

V_DSS

75V

R_DS(on)typ.

max

2.2m

2.6m

246A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

195A

Benefits

 Improved gate, avalanche and dynamic dV/dt ruggedness

 Fully characterized capacitance and avalanche SOA

 Enhanced body diode dV/dt and dI/dt capability

 Lead-free, RoHS compliant

TO-220AB

TO-262

D2Pak

IRFB7730PbF

IRFSL7730PbF

IRFS7730PbF

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRFB7730PbF

IRFSL7730PbF

IRFS7730PbF

TO-220

TO-262

D²-Pak

Tube

IRFB7730PbF

IRFSL7730PbF

IRFS7730PbF

Tube

Tape and Reel Left

800

IRFS7730TRLPbF

250

200

150

100

= 100A

Limited by package

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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