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IRFB260NPBF PDF预览

IRFB260NPBF

更新时间: 2024-09-16 04:18:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 167K
描述
HEXFET Power MOSFET

IRFB260NPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.88
雪崩能效等级(Eas):450 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):56 A最大漏极电流 (ID):56 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):380 W
最大脉冲漏极电流 (IDM):220 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFB260NPBF 数据手册

 浏览型号IRFB260NPBF的Datasheet PDF文件第2页浏览型号IRFB260NPBF的Datasheet PDF文件第3页浏览型号IRFB260NPBF的Datasheet PDF文件第4页浏览型号IRFB260NPBF的Datasheet PDF文件第5页浏览型号IRFB260NPBF的Datasheet PDF文件第6页浏览型号IRFB260NPBF的Datasheet PDF文件第7页 
PD - 95473  
SMPS MOSFET  
IRFB260NPbF  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
200V  
RDS(on) max  
ID  
56A  
0.040Ω  
Benefits  
l Low Gate-to-Drain Charge to Reduce Switching Losses  
l Fully Characterized Capacitance Including Effective COSS to  
Simplify Design, (See App. Note AN1001)  
l Fully Characterized Avalanche Voltage and Current  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
56  
40  
220  
A
PD @TC = 25°C  
Power Dissipation  
380  
W
W/°C  
V
Linear Derating Factor  
2.5  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
10  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.40  
–––  
62  
°C/W  
Notes  through are on page 8  
www.irf.com  
1
7/7/04  

IRFB260NPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFB260N INFINEON

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Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)

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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-220AB