Datasheet > IRFB3306

IRFB3306

更新时间： 2024-11-28 11:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	328K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFB3306 数据手册

IRFB3306PbF

IRFS3306PbF

IRFSL3306PbF

HEXFET^®Power MOSFET

60V

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

3.3m

4.2m

160A

max.

l Hard Switched and High Frequency Circuits

I_D

(Silicon Limited)

Benefits

I_{D (Package Limited)}

120A

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

l RoHSCompliant,Halogen-Free

D²Pak

TO-262

TO-220AB

IRFS3306PbF

IRFSL3306PbF

IRFB3306PbF

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

IRFB3306PbF

IRFSL3306PbF

TO-220

TO-262

Tube

IRFB3306PbF

Tube

IRFSL3306PbF

IRFS3306PbF

D2Pak

Tape and Reel Left

Tape and Reel Right

800

IRFS3306TRLPbF

IRFS3306TRRPbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

160

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

110

120

620

230

P_D@T_C= 25°C

Maximum Power Dissipation

1.5

Linear Derating Factor

W/°C

± 20

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

184

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

Max.

0.65

–––

Units

R_θ

–––

0.50

–––

R_θ

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

°C/W

R_θ

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April 24, 2014

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与IRFB3306相关器件

型号	品牌	获取价格	描述	数据表
IRFB3306GPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB3306PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB3307	INFINEON	获取价格	HEXFET Power MOSFET
IRFB3307PBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFB3307Z	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capabil
IRFB3307ZGPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFB3307ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB33N15D	INFINEON	获取价格	Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)
IRFB33N15DPBF	INFINEON	获取价格	High frequency DC-DC converters
IRFB3407ZPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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