Datasheet > IRFB3006

IRFB3006

更新时间： 2024-11-07 11:13:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	251K
描述
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

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IRFB3006 数据手册

IRFB3006PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification

V_DSS

R_DS(on)typ.

max.

60V

2.1m

2.5m

in SMPS

l UninterruptiblePowerSupply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

I_D

270A

(Silicon Limited)

I_D

195A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic

dV/dtRuggedness

l Fully Characterized Capacitance and

AvalancheSOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

l RoHS Compliant, Halogen-Free

TO-220AB

Gate

Drain

Source

Standard Pack

Form

Tube

Base Part Number

Package Type

Orderable Part Number

Quantity

IRFB3006PbF

TO-220

IRFB3006PbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

270

190

195

1080

375

2.5

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

320

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

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April 23, 2014

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与IRFB3006相关器件

型号	品牌	获取价格	描述	数据表
IRFB3006GPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB3006PBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFB3077	ISC	获取价格	N-Channel MOSFET Transistor
IRFB3077	INFINEON	获取价格	The IR MOSFET? family of power MOSFETs utilizes proven silicon processes offering designer
IRFB3077GPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB3077PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB30N20D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 30A I(D) \| TO-220AB
IRFB31N20	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
IRFB31N20D	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
IRFB31N20DPBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 200V , RDS(on)ma

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