Datasheet > IRFB3006GPBF

IRFB3006GPBF

更新时间： 2024-09-16 12:32:23

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
8页	294K
描述
High Efficiency Synchronous Rectification in SMPS

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数据手册

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IRFB3006GPBF 数据手册

PD - 96238

IRFB3006GPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

60V

2.1m

2.5m

max.

l Hard Switched and High Frequency Circuits

I_D

270A

(Silicon Limited)

195A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

l Halogen-Free

TO-220AB

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

270

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

190

195

1080

375

P_D@T_C= 25°C

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

320

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

www.irf.com

06/29/09

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