Datasheet > IRFB3077

IRFB3077

更新时间： 2024-11-28 14:53:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	303K
描述
The IR MOSFET? family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

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IRFB3077 数据手册

PD - 97047B

IRFB3077PbF

Applications

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

75V

2.8m

3.3m

Benefits

l Worldwide Best R_DS(on)in TO-220

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

I_D

210A

(Silicon Limited)

I_D

120A

(Package Limited)

l Enhanced body diode dV/dt and dI/dt Capability

TO-220AB

IRFB3077PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

210c

150c

120

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

850

P_D@T_C= 25°C

370

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

2.5

Peak Diode Recovery f

dV/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

200

Avalanche Current d

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.402

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case k

Case-to-Sink, Flat Greased Surface

0.50

–––

°C/W

Junction-to-Ambient jk

www.irf.com

5/2/11

12 3 4 5 6 7...9

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