Datasheet > IRFB3004

IRFB3004

更新时间： 2024-09-17 14:52:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	466K
描述
The IR MOSFET? family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

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IRFB3004 数据手册

PD - 97377

IRFB3004PbF

IRFS3004PbF

IRFSL3004PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

40V

1.4m

1.75m

Ω

I_D

340A

(Silicon Limited)

Benefits

I_D

195A

(Package Limited)

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS3004PbF

TO-220AB

IRFB3004PbF

TO-262

IRFSL3004PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

340c

240c

195

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

1310

P_D@T_C= 25°C

380

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

4.4

Peak Diode Recovery f

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

10lbfxin (1.1Nxm)

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

300

Avalanche Currentꢀd

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy d

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case kl

Typ.

–––

Max.

0.40

–––

Units

R_θJC

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat Greased Surface, TO-220

°C/W

Junction-to-Ambient, TO-220

–––

Junction-to-Ambient (PCB Mount) , D Pak

www.irf.com

02/26/09

12 3 4 5 6 7...12

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与IRFB3004相关器件

型号	品牌	获取价格	描述	数据表
IRFB3004PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB3006	INFINEON	获取价格	The IR MOSFET™ family of power MOSFETs utiliz
IRFB3006GPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB3006PBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFB3077	ISC	获取价格	N-Channel MOSFET Transistor
IRFB3077	INFINEON	获取价格	The IR MOSFET? family of power MOSFETs utilizes proven silicon processes offering designer
IRFB3077GPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB3077PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB30N20D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 30A I(D) \| TO-220AB
IRFB31N20	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)

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