IRF7492

更新时间： 2024-11-19 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	106K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF7492 数据手册

PD - 94498

IRF7492

HEXFET^®Power MOSFET

V_DSS

200V

R_DS(on)max

I_D

Applications

l High frequency DC-DC converters

79mΩ@V_GS= 10V 3.7A

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

200

Units

V_DS

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.7

3.0

P_D@T_A= 25°C

Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

V/ns

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

9.5

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

R_θJA

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

–––

Notes through are on page 8

www.irf.com

06/27/02

12 3 4 5 6 7 8

中文翻译

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