IRF7491PBF

更新时间： 2024-11-20 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	136K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRF7491PBF 数据手册

PD - 95285

IRF7491PbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

R_DS(on)max

I_D

16m @V_GS= 10V

80V

9.7A

l Lead-Free

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

9.7

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

6.1

@T = 25°C

Maximum Power Dissipation

Linear Derating Factor

2.5

0.02

4.4

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient (PCB Mount) *

Typ.

–––

Max.

Units

R_θJL

R_θJA

°C/W

–––

Notes through are on page 8

www.irf.com

09/16/04

12 3 4 5 6 7 8

中文翻译

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