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IRF7490PBF PDF预览

IRF7490PBF

更新时间: 2024-11-20 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 150K
描述
HEXFET Power MOSFET

IRF7490PBF 数据手册

 浏览型号IRF7490PBF的Datasheet PDF文件第2页浏览型号IRF7490PBF的Datasheet PDF文件第3页浏览型号IRF7490PBF的Datasheet PDF文件第4页浏览型号IRF7490PBF的Datasheet PDF文件第5页浏览型号IRF7490PBF的Datasheet PDF文件第6页浏览型号IRF7490PBF的Datasheet PDF文件第7页 
PD - 95284  
IRF7490PbF  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
100V  
RDS(on) max  
39mW@VGS=10V  
Qg  
37nC  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
A
A
D
1
2
3
4
8
7
S
S
S
G
D
6
5
D
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
100  
V
VGS  
Gate-to-Source Voltage  
± 20  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
5.4  
4.3  
A
43  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
2.5  
1.6  
W
20  
mW/°C  
°C  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
RθJA  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient „  
Typ.  
–––  
Max.  
20  
50  
Units  
–––  
°C/W  
Notes  through „are on page 9  
www.irf.com  
1
09/15/04  

IRF7490PBF 替代型号

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Industry-standard pinout SO-8 Package