Datasheet > IRF7490TR

IRF7490TR

更新时间： 2024-11-20 21:04:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	137K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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数据手册

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IRF7490TR 数据手册

PD - 94508

IRF7490

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

R_DS(on)max

Q_g

100V

39mW@V_GS=10V

37nC

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

100

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.4

4.3

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

mW/°C

°C

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

R_θJA

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

–––

°C/W

Notes through are on page 9

www.irf.com

9/23/02

12 3 4 5 6 7...9

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